Excimer laser annealing studies were conducted of SrBi2Ta2O9, Pb(ZrxTi1-x)O3 and CeMnO3 thin films. The main incentive was to develop a low temperature process for SrBi2Ta2O9 thin films, which typically require a 750 C anneal to crystallize and achieve optimum ferroelectric properties. The results show that room temperature laser annealing can crystallize SrBi2Ta2O9, with a strong (200) preferred orientation. The Pb(ZrxTi1-x)O3 and CeMnO3 thin films investigated in this study were crystalline as deposited. Laser annealing of the Pb(ZrxTi1-x)O3 and CeMnO3 films did not result in a significant increase in crystallinity, as evidenced by the intensities of the x-ray diffraction peaks. Electrical characterization of laser annealed SrBi2Ta2O9 thin films showed good dielectric properties and the onset of ferroelectric behavior. Low temperature laser annealing is shown to be a viable approach to enable integration of ferroelectric SrBi2Ta2O9 films with silicon based micro-electronics, for ferroelectric memory applications.