A new Rapid Thermal Processing technique based on heating by irradiation from CO2 laser is presented. It is particularly suitable for thermal treatment of low melting temperature materials such as annealing implantation induced damage in compound semiconductors.
Short time heating of the sample is achieved by its contact with a quartz plate heated by photons from a CW CO2 laser. The quartz serves both as an absorbing medium for the radiation and as a proximity cap. Steady state temperature can be obtained by the simultaneous heating of the sample by the laser and its cooling by a jet of N2 gas.
The present technique, when applied to ion implanted InSb (TA<450°C, t=10 seconds), leads to removal of the implantation damage which is comparable to that obtained by furnace or flash lamp (Heatpulse™)annealing.