In this work, we report the composition, optical, and electrical properties of a- Si1-YGeY: H, F films to be used as sensing layer in uncooled microbolometers. The a-Si1-YGeY films where Y is Ge content in solid phase were deposited by low frequency PECVD from SiH4 and GeF4 feed gases, and H2 and Ar were used for dilution. The film composition, IR transmission and temperature dependence of conductivity were measured. The reduction of conductivity activation energy from 0.86 eV to 0.39 eV and the increase of room temperature conductivity from 1x10−9 to 2.1×10−3 Ohm−1cm−1 were observed with the change of Y from 0 (Si) to 1(Ge). These results demonstrate this material to be a good candidate as a sensing material in uncooled micro-bolometers, due to its high absorption in the range of λ = 10-13 μm, its relatively high activation energy, Ea=0.4 eV, consequently, a high temperature coefficient of resistance (TCR), and moderate resistivity at room temperature.