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Thin films of W were grown using the low pressure chemical-vapour deposition technique in WF6/SiH4 flow on a TiN layer obtained by annealing in nitrogen atmosphere Ti films for different times. The investigation of W nucleation was followed by Atomic Force Microscopy in air. The Atomic Force images taken after fixed time of exposure of the TiN layer to the WF6/SiH4 flow show, on the surface of the W films, the presence of columnar structures only when the TiN films were obtained with forming times below 100 minutes. To investigate this effect X-ray Photoelectron Spectroscopy depth profile and X-Ray Diffraction measurements were performed on the obtained W/TiN films. The results show the deeper penetration of the nitrogen into the titanium layer with the longer forming time and a non stoichiometric composition of TiN interfacial layer which strongly influences the W nucleation.
ONO (SiO2/Si3N4/SiO2) structures with thickness less than 10 nm were deposited onto silicon wafers by successive steps using two different method. The effects of the forming time and temperature on the stoichiometry of the single layers and of the whole sandwich have been studied using X-ray Photoelectron Spectroscopy (XPS). This paper demonstrates that the “Auger parameter method” is highly suitable in quantifying the composition of very thin insulating structures.
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