Metal induced growth (MIG) was used to form epitaxial thin films of microcrystalline Si (μc-Si). By substituting Al as the catalyst metal in place of the usual Ni, x-ray diffraction (XRD) confirmed that μc-Si was successfully grown at temperatures between 350-525°C. At 525°C, a preferred orientation of (220) Si was observed with additional (111) and (311) Si orientations, while a temperature of 350°C resulted in a shift in preferred orientation to (111) Si. The lower limit for Al thickness was found to be between 10-20 nm with little crystallization and a smooth surface observed at 10 nm with XRD and SEM, respectively. Electrical measurements on Schottky diodes revealed space-charge limited conduction (SCLC) with an exponential distribution of trap levels due to diffusion of Al atoms into the Si, which was supported by analysis with energy dispersive x-ray spectroscopy (EDX) near the film surface. By depositing a thin layer of Co on top of Al prior to sputtering, the films exhibited increased crystallinity and a more uniform surface likely due to increased confinement of Al atoms. Electrical measurements demonstrated a shift from SCLC to thermionic emission in resulting Schottky diodes.