The electrical heating of Ni/Al laminate foils allows interrogation of phenomena at heating rates as high as 10^12 K/s. In the 2011 Fall MRS meeting, we reported on emission spectra from rapidly heated Ni/Al laminates resolved temporally over 350 ns, which provided qualitative evidence of rapid and exothermic vapor phase mixing of Ni and Al in these experiments which we term electrical explosions. These results were significant, because thermal diffusion processes normally limit Ni/Al reactions to much slower energy release rates, potentially limiting their applications. Here we present further evidence of exothermic Ni/Al mixing, quantified by experimental velocity measurements of encapsulation material and interpreted by numerical calculations of energy partitioning into different processes. These calculations agreed well with experiments from different Al, Cu, and Ni samples, sputter-deposited and lithographically patterned into bow-tie bridge structures. Velocity measurements of up to 5 km/s for 11.5 μm thick parylene encapsulation layers were accurately predicted using a single, empirical fitting parameter which depended on the electrical circuit used. The calculations also agreed with encapsulation layers accelerated by electrically exploded Ni/Al laminates as long as an additional 1.2 kJ/g of energy was included in the model. This value is precisely the enthalpy of mixing between Ni and Al, and therefore quantifies the transduction of energy into encapsulation layer kinetic energy.

Experiments were performed to incorporate Li and N simultaneously into the diamond lattice during hot-filament chemical vapour deposition in an attempt to produce n-type semiconducting diamond with useful electronic characteristics. Microcrystalline diamond films were grown using a mixture of methane/ammonia/hydrogen gases with tantalum as the filament. The Li was added by placing crystals of lithium nitride (Li3N) on the substrate and allowing them to melt and then slowly diffuse into the film. SIMS depth profiles showed that this process produced high levels of Li and N (0.05% - 0.5%) situated in the same region within the diamond film. The crystallinity and morphology of diamond crystals produced were confirmed using laser Raman spectrometry and scanning electron microscopy.

A prerequisite for modelling the growth of diamond by CVD is knowledge of the identities and concentrations of the gas-phase species which impact upon the growing diamond surface. Two methods have been devised for the estimation of this information, and have been used to determine adsorption rates for C x H y hydrocarbons for process conditions that experimentally produce single-crystal diamond, microcrystalline diamond films, nanocrystalline diamond films and ultrananocrystalline diamond films. Both methods rely on adapting a previously developed model for the gas-phase chemistry occurring in a hot filament or microwave plasma reactor. Using these methods, the concentrations of most of the C x H y radical species, with the exception of CH3, at the surface have been found to be several orders of magnitude smaller than previously believed. In most cases these low concentrations suggest that reactions such as direct insertion of C1H y (y = 0-2) and/or C2 into surface C–H or C–C bonds can be neglected and that such species do not contribute significantly to the diamond growth process in the reactors under study.

Nucleation is the rate-determining step in the initial stages of most chemical vapour deposition processes. In order to achieve uniform deposition of diamond thin films it is necessary to seed non-diamond substrates. Here we discuss a simple electrospray deposition technique for application of 5 nm diamond seed particles onto substrates of various sizes. The influence of selected parameters, such as experimental spatial arrangement and colloidal properties, are analysed in optimizing the method by optical and electron microscopy, both before and after nanocrystalline diamond deposition on the seed layer. The advantages and limitations of the electrospray method are highlighted in relation to other commonly exploited nucleation techniques.