To send content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about sending content to .
To send content items to your Kindle, first ensure email@example.com
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about sending to your Kindle.
Note you can select to send to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
A novel approach for a single step lapping and chemical-mechanical polishing of antimonide-based III-V compounds using agglomerate-free alumina slurries is presented. Relatively high removal rates, minimal scratching, and low surface roughness have been obtained. The effects of slurry preparation cycle on the slurry properties and chemomechanical polishing results are discussed.
This paper presents some of the widely used characterization tools for antimonide based III-V compounds, focusing on characterization of defects that limit device operation. The effect of microstructure on the electro-optical properties of GaSb and GaInAsSb important in devices is emphasized.
Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with an isoelectronic dopant, aluminum, on the native acceptors and on the general structure of extended defects of gallium antimonide single crystals. While there is no significant change in the native defect content, decoration of non-radiative recombination centers or extended defects occurs as a result of aluminum doping.
The nucleation morphologies of LPE grown GaSb, AlGaSb and AlGaAsSb layers on GaSb substrates are presented. The morphology of the GaSb layers grown from Sb-rich melts showed facets on highly terraced surface, whereas those grown from Ga-rich melts exhibited fine terraces without facets. An optimum temperature in the range of 500 – 550°C was found to be suitable for the growth of mirror smooth layers from Ga-melts. The surface morphology of the AlxGa1-xSb layers degrades drastically with increase in Al content beyond x = 0.5. The surface morphology of AlGaAsSb epilayers has been found to depend strongly on the pre-growth melt dissolution sequence.
The effect of hydrogen plasma treatment on the optical and electrical properties of Gallium Antimonide bulk single crystals is presented. Plasma exposure gives rise to a layer of defects on the surface. These defects introduce multiple trap levels in the band gap from which a slow emission of carriers is observed during the capacitance - voltage measurements. On removal of the defect layer by controlled etching, the effects of hydrogen passivation are seen. The results of optical measurements indicate that passivation of shallow acceptors is more efficient than that of the donors and in general the passivation efficiency depends on the doping level. Passivation of deep levels and extended defects like grain boundaries and dislocations has also been observed. The thermal stability of the passivated deep level and extended defects is higher than that of the shallow level.
Email your librarian or administrator to recommend adding this to your organisation's collection.