Strategies are proposed to cope with uncertainties in a way that all possible kinds of uncertainty are named, recognized, statistically quantified as far as possible and utilized in efficient decision-making in flood risk management (FRM). We elaborated on the metaphor of uncertainty as a monster. We recommend two strategies to cope with the uncertainty monster to support efficient decision-making in FRM: monster adaptation and monster assimilation. We present three cases to illustrate these strategies. We argue that these strategies benefit from improving the structure and reducing the complexity of decision problems. We discuss ways to involve decision-makers in FRM, and how communication strategies can be responsive to their informational needs.

Objectives: The aim of this study was to explore the risk assessment tools and criteria used to assess the risk of medical devices in hospitals, and to explore the link between the risk of a medical device and how those risks impact or alter the training of staff.

Methods: Within a broader questionnaire on implementation of a national guideline, we collected quantitative data regarding the types of risk assessment tools used in hospitals and the training of healthcare staff.

Results: The response rate for the questionnaire was 81 percent; a total of sixty-five of eighty Dutch hospitals. All hospitals use a risk assessment tool and the biggest cluster (40 percent) use a tool developed internally. The criteria used to assess risk most often are: the function of the device (92 percent), the severity of adverse events (88 percent) and the frequency of use (77 percent). Forty-seven of fifty-six hospitals (84 percent) base their training on the risk associated with a medical device. For medium- and high-risk devices, the main method is practical training. As risk increases, the amount and type of training and examination increases.

Conclusions: Dutch hospitals use a wide range of tools to assess the risk of medical devices. These tools are often based on the same criteria: the function of the device, the potential severity of adverse events, and the frequency of use. Furthermore, these tools are used to determine the amount and type of training required for staff. If the risk of a device is higher, then the training and examination is more extensive.

ZnO TFTs with bottom gate top S/D contact architecture were fabricated by sputtering of ZnO with layer thicknesses from 30 nm to 100 nm. The effect of post deposition annealing in oxygen and forming gas atmospheres at 400°C to 500°C on the devices was investigated. The tendencies of a lower threshold voltage Vth and a higher saturation mobility μsat for higher annealing temperature can be observed for both oxygen and forming gas annealing. Reduction of trap density in oxygen annealing and additional hydrogen incorporation in forming gas annealing play an important role for these electrical parameters. Morphological changes of increased grain size and fewer grain boundaries in the channel also contribute to tendencies in electrical characteristics of ZnO TFTs.

Chemical solution processing of Gd2Zr2O7 (GZO) thin films via sol-gel and metalorganic decomposition (MOD) precursor routes have been studied on textured Ni-based tape substrates. Even though films processed by both techniques showed similar property characteristics, the MOD-derived samples developed a high degree of texture alignment at significantly lower temperatures. Both precursor chemistries resulted in exceptionally dense, pore-free, and smooth microstructures, reflected in the cross-sectional and plan-view high-resolution scanning and transmission electron microscopy studies. On the MOD GZO buffered Ni–3at.% W (Ni–W) substrates with additional CeO2/YSZ sputtered over layers, a 0.8-μm-thick YBa2Cu3O7−δ (YBCO) film, grown by an ex situ metalorganic trifluoroacetate precursor method, yielded critical current, Ic (77 K, self-field), of 100 A/cm width. Furthermore, using pulsed-laser deposited YBCO films, a zero-field superconducting critical current density, Jc (77 K), of 1 × 106 A/cm2 was demonstrated on an all-solution, simplified CeO2(MOD)/GZO(MOD)/Ni–W architecture. The present study establishes GZO buffers as a candidate material for low-cost, all-solution coated conductor fabrication.

High electron mobility transistors (HEMTs) with single quantum well active layers composed of pseudomorphic IπGaAs grown on GaAs and InP are establishing new standards of performance for microwave and millimeter wave applications. This is due to recent progress in the molecular beam epitaxial growth of strained InGaAs heterostructures coupled with developments in short gate length (sub%0.2 µm) device fabrication technology. This paper reviews this progress and the current state-of-the-art for materials and devices.