A2B6 semiconductors and their solid solutions (ZnSe, ZnTe, CdTe, ZnCdHgTe) are matter of choice for near- and far-infrared optoelectronics. The importance of maximally reduced degree of defectness for these materials is not subjected to discussion. However, preparation of high quality barrier structures based on these compounds by means of MBE, laser technology or liquid phase technique is not always successful due to lattice parameters mismatch. At the same time, good selection of a proper buffer layer may also pose some unavoidable problems. From this point of view the nanoindentation as a tool of defect engineering can be effective for fabrication of surface barrier structures. The first experimental results and numerical simulation of experimental data obtained under investigation of nanoindentation effect on electric characteristics (in particular, current – voltage (I-V) and capacitance – voltage (C-V)) of ZnCdHgTe thin films and ZnCdHgTe/Cd(Zn)Te heterostructures at the room temperature are presented.