We report on a detailed analysis of paramagnetic states in a doping series of microcrystalline silicon, μc-Si:H, by pulsed electron spin resonance. We identify two dangling bond like structures at g = 2.0052 (db1) and g = 2.0043 (db2). Whereas db1 is evenly distributed in the gap, the db2 state is found to be localized in the lower part of the gap. The CE resonance at g ≈ 1.998 is assigned to electrons in conduction band tail states. In p-doped samples, we observe a broad structure CH at g ≈ 2.08 which we identify with holes trapped in valence band tail states. It is shown that the CH state behaves very similar on illumination as the CE resonance. In n-type samples a pair of hyperfine split lines (A ≈ 11 mT) is found which apparently does not originate from 31P-donor states. On the basis of our results we propose a qualitative model for paramagnetic states in μc-Si:H.