Sputtered amorphous germanium films have been examined by spectroscopic ellipsometry. a technique known to yield the void fraction in the bulk of the film,. (and hence a measure of density, ρcalc) with a high degree of precision, Considering the commonly accepted values of the dielectric function and the directly measured density, ρexpt, of Paul, Connell and Tomkin (1973), as the reference data, we reportf that ρcalc for some a-Ge films can be greater than that of crystalline Ge. Examination of the top surface of the sputter deposited films indicates that the highest densities are achieved under conditions of high energy ion bombardment of the film. This study indicates that a more detailed microscopic model of the structure of a-Ge must be considered.