The electronic properties of working nanocrystalline silicon (nc-Si:H) solar cell devices with conversion efficiencies up to 8.6% were studied using junction capacitance methods. The set of devices examined were deposited on both specular stainless steel substrates and Ag/ZnO textured back reflectors. These devices included nc-Si:H grown under constant H2 dilution, and also with profiled H2 dilution to control the crystallite sizes and volume fraction. Transient photocapacitance and transient photocurrent spectroscopies were used to obtain sub-band-gap optical spectra. A comparison of these two kinds of spectra also allowed us to deduce the minority carrier collection fractions as a function of temperature and light-induced degradation. Light-soaking was found to cause a distinct decrease in minority carrier collection, as well as a consistent decrease in defects responding to drive-level capacitance profiling. A tentative microscopic model is proposed that accounts for these degradation effects in nc-Si:H.