We describe a new approach to deposition of Parylene N thin films. It utilizes a small scale, sonic speed, Jet Vapor DepositionTM (JVDTM) process technology in place of the conventional larger scale, slow flow, Gorham apparatus. It employs a simple but powerful strategy to promote radical polymerization: exposure of the growing film, during deposition, to a high flux of atomic hydrogen. We believe that H atoms have two effects: they clean oxygen from the substrate, and they promote crosslinking in the Parylene film by abstraction of H atoms from the Parylene ring or side groups. With “H atom assisted JVD” Parylene N deposits and adheres even on warm substrates; it has reduced index of refraction and dielectric constant.