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A unique simulation method of epoxy-based chemically-amplified resist by coarse-grained molecular dynamics was proposed. The mechanical properties of an epoxy-based chemically-amplified resists with various cross-linking ratios were simulated using a newly developed coarse-grained molecular dynamics simulation that employs a bead-spring model. Models with the different cross-linking ratios were created in the molecular dynamics calculation step and uniaxial elongation simulations were performed. The results reveal that the simulated elastic modulus of the resist modeled by the bead-spring model with an extended angle bending potential depends on the cross-linking ratio; its dependency exhibits good agreement with that determined by nanoindentation tests.
Fatigue fracture under cyclic loading of single crystal silicon (SCS) is concerned and fatigue properties and mechanism are investigated widely. Surface oxide is considered to have an important role on fatigue fractures. In this paper, the tensile testing of SCS whose surface was intentionally oxidized and the effect of the oxide thickness on the mechanical properties were reported. After fabrication of SCS specimens, they were oxidized in dry oxidization at 1100 ºC. Quasi-static tensile testing of SCS specimens with no, 100-nm-oxide, and 200-nm-oxide thick oxide was performed. As the results, the deviation in fracture strain was decreased by oxidation, and the fracture origin was observed to be the inner silicon part. These results might be caused by the decrease of surface roughness and defects formation by oxygen precipitation during thermal oxidation.
(Zr, Sn)TiO4 is considered as a promising dielectric material for microwave devices owing to the temperature stability of capacitance and excellent microwave properties. Preferential (111)-oriented (ZrSn)TiO4 thin film was obtained by an ArF laser ablation. Properties of the crystallized film were as follows; the temperature coefficient of capacitance TCC was 17.6ppm/°C at 3MHz and the dielectric constant εr, 38 in the microwave range of 1GHz˜10GHz. It has turned out that the crystallization of this material is quite effective for improving dielectrical properties. Surface morphologies were observed by atomic force microscope(AFM). Grains grew on the crystallized film at 1 μm × 1 μm size.
Phenomena and solving methods for damage of Sb-doped SbO2 thin films deposited by RF magnetron sputtering have been investigated by observing in the main the positional difference of film electrical resistivity. A ring plate mask was used to disperse the energetic particles and sputtering parameters were controlled such a manner that effects by the parameters were compensated each other. By the control, positional differences in resistivity and XRD patterns of the films could be reduced to a minimum value; The films became nearly uniform ones.
A pyroelectric infrared sensor using a poly(vinylidene fluoride) (PVDF) thin film has been integrated with a read-out circuit on a silicon substrate. The PVDF thin film with a thickness of 1-2 µm was deposited on the sensing area by an electro-spray (ESP) method. A form I crystal and a large pyroelectric coefficient of 4 nCcm−2K−1 were observed just after the deposition without any poling treatments. The fabrication process of the sensor was based on a standard MOS LSI process and a polysilicon sacrificial layer etching technique. In order to reduce the heat capacitance and the thermal conduction, the PVDF thin film was supported on a thin Si3N4 membrane structure formed by etching a part of the silicon substrate under the sensing area. The sensor with a sensing area of 400x400 µm2 had a responsivity of 98 V/W, a detectivity of l.4× 107 cmHz1/2W−1, an NEP of 2.9× 10−99 Hz1/2W at a frequency of 100 Hz and a time constant of 1.3 msec.
We have formed PbTIO thin films on SrTiO3 substrate (100) at low temperature of 350°C using an ArF excimer laser ablation technique. Until now, the PbTiO3 films have not been formed at the temperature lower than 500°C using other thin film techniques. The Important points In the present study are the laser excitation of the substrate during the film growth and the lattice matching between the film and the substrate. The film deposited on the SrTiO3 substrate, shows preferential orientation of the c-axis perpendicular to the substrate surface.
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