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This paper introduces a highly reliable Cu interconnect technology at the 32 nm node with CuMn alloy seed. A CuMn alloy liner seed process combined with a non-gouging liner has been integrated into the minimum-pitch wiring level. Stress migration fails with CuMn seed at plate-below-via structures were shut down by a non-gouging liner process. Integration with gouging liner and non-gouging liner is compared, and results of interaction with CuMn seed are discussed in this paper.
The scaling of BEOL interconnect technology in ULSI circuitry requires the integration of Cu wiring with ultra-low K (ULK) dielectrics. We present the results of a study of the interaction between different-stoichiometry Ta(N)/Cu barrier processes and porous ULK dielectrics (k=2.4) at 32nm groundrules Auger and diffraction analysis of blanket wafers was used to benchmark two different stoichiometries of TaN barrier deposited using commercially-available ionized PVD sources. Comparison TEM and EDX/EELS images indicates that barrier oxidation is occurring in the low nitrogen-content Ta(N) barrier, which is absent at the higher stoichiometry. These differences are further manifested in defect-density analysis of patterned wafers comparing the two processes. These results illustrate the critical importance the TaN barrier properties play in enabling the integration of Cu/ULK interconnects at 32nm at beyond.
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