Sn3O4 nanobelts were grown by a carbothermal evaporation process of SnO2 powders in association with the well known vapour-solid mechanism (VS). The nanobelts crystal structure was investigated by x-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), raman spectroscopy and field emission gun scanning electron microscopy (FEG-SEM). The structural and morphological characterization has confirmed the growth of single crystal nanobelts. The electrical characterization (current-voltage, temperature-dependent resistance curves) of individual Sn3O4 nanobelts was performed at different temperatures and light excitation. The experiments revealed a semiconductor – like character as evidenced by the resistance decreasing at high temperatures. The transport mechanism was identified as the variable range hopping.