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2 results

  • Fabrication and Characterization of InGaN Nano-scale Dots for Blue and Green LED Applications

  • K.S. Kim, C.-H. Hong, W.-H. Lee, C.S. Kim, O.H. Cha, G.M. Yang, E.-K. Suh, K.Y. Lim, H.J. Lee, H.K. Cho, J.Y. Lee, J.M. Seo
  • Journal:
    Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
    Published online by Cambridge University Press:
    13 June 2014, pp. 880-886
    Print publication:
    2000
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  • Thin layers of InGaN were grown by metalorganic chemical vapor deposition and characterized with atomic force microscopy and high-resolution transmission electron microscopy. InGaN deposited on GaN exhibits a Stranski-Krastanov growth mode, including 2D wetting layer and 3D self-assembled quantum dots. Besides, we observed that the formed InGaN nano-scale dots have a trapezoidal shape with a {1-102} facet with respect to (0002) surface. Visible spectral range from UV to green was easily obtained by changing InGaN quantum well thickness up to 2.3 nm.