In this work, we present an extensive study of the oxidation process of Si/Ge nanocrystals (nc-Ge)/Si samples using SIMS (Second Ion Mass Spectroscopy), Transmission Electron Micrscopy (TEM), Atomic Force Microscopy (AFM) and electrical characterization of Metal/Oxide/Semiconductor capacitors (MOS). Various samples with different oxidation times have been studied and it is demonstrated that Silicon dry oxidation kinetics is not influenced by the presence of Ge. As shown by SIMS measurements, a pure SiO2 layer is formed on the top of the structure, while the Ge atoms are intermixed with the silicon substrate. The TEM and AFM analysis show that the nc-Ge height is drastically reduced during the oxidation process. The fabrication of MOS capacitors on the structures allowed to study electron and hole trapping in the Ge dots. From our analysis we have shown that the Ge nanostructures which covered by SiO2 are not isolated from the Si substrate.