Graphene growth by chemical vapor deposition (CVD) was studied on three types of epitaxial metal films with different crystal structures on sapphire. Nickel (face-centered-cubic: fcc), Ru (hexagonal-closed-pack: hcp), and Co (fcc at temperature for graphene growth and hcp at R.T.) were deposited on c-face sapphire substrates and annealed in a furnace for solid phase epitaxial growth. Graphene layers were grown by CVD with methane gas on the epitaxial metal film. The graphene layer uniformity was consistent with the structural simplicity of the metal film. The Ru sample had a single domain in the metal film and the highest graphene uniformity. The Co sample had a very complex crystal structure in the metal film and the poorest uniformity in graphene. The Ni sample had two types of stacking domains in the metal film and the graphene layer was uniform on each domain, but inhomogeneity was observed at domain boundaries.

The nano-meter controlled iron/iron-oxide multilayer materials have been successfully obtained by the pulse reactive sputtering method with high deposition rate. These multilayer demonstrated a good thermal stability of its structure and magnetic properties up to 500°C when a small amount of Si was doped in the structure, whereas the non-doped multilayer degraded at above 300°C. The difference of the oxidation energy between Fe and Si increases the thermal stability of the interface between Fe and Fe-O layer.