We present an integrated Monte Carlo implant simulator which is capable of accurately simulating ion implantation into any amorphous materials and crystalline Si for 1D/2D/3D structures with arbitrary geometry and topography. With this simulator, we investigate some practical examples which reveal interesting 2D/3D effects, and demonstrate the importance of <110> channeling for sub-100nm silicon technology.

Three-dimensional analyses of anisotropic stress effects during thermal oxidation of silicon are performed in this study using finite strain formulation. A reaction rate model that conjugates pressure to a crystalline direction dependent activation volume is employed for the modeling of facet formation in an STI MOSFET device. The numerical results agree well with TEM observations. The 3-D nature of stress evolution in fabrication process is demonstrated and the implication of stress relaxation on device performance in a strained SiGe based device is discussed.

2D calculations of as-implanted dopant profiles are performed using a new module of the process simulator DIOS which is based on the binary collision code Crystal-TRIM. Examples derived from MOS and trench technology are considered. Good lateral and depth resolution is achieved within an acceptable computing time by combining a trajectory splitting algorithm with a method for the lateral duplication of ion trajectories.