The orientation of rhodamine 6G (R6G) in the 22-Å basal-spaced complex with Li-fluor-taeniolite has been studied using X-raypowder diffraction, 1-dimensional Fourier analysis, polarized infrared (IR) spectroscopy, carbon analysis and thermal analysis. The R6G was adsorbed by cation exchange in aqueous solution. In the range of 0.086 to 0.46 molar ratio of R6G to taeniolite, the basal spacings of the complex were nearly constant at 21.7 to 22.2 Å. From X-raydiffraction (XRD) data, it was confirmed that R6G in the complex orients with its longest xanthene ring axis perpendicular to the ab plane of the host. The pleochroism of IR absorption bands at 1331, 1517, 1537 and 1621 cm−1 supports the vertical orientation. The wide stability range of the vertical configuration is consistent with the strong coulombic force between the highly negatively charged silicate layer of the host [cation exchange capacity (CEC) = 157 ± 9 meq/100 g] and the positively charged nitrogen bonded to both sides of the R6G xanthene ring.

Effects of rapid thermal processing (RTP) on SiO2/GaAs interfaces have been studied with X-ray photoelectron spectroscopy, capacitance-voltage measurements and deep-level transient spectroscopy. SiO2 films of 50, 200 and 1250 nim thickness have been deposited on GaAs. RTP has been performed at 760 and 910°C for 9 s. The rapid diffusion of Ga through the SiO2 film occurs, and the As loss and the formation of the As layer near the interface are observed. The decrease of the carrier concentration occurs in all RTP samples. Five electron traps EAI (Ec – 0.27 eV), EA2 (Ec – 0.32 eV), EA3 (Ec – 0.47 eV), EA4 (Ec – 0.58 eV) and EL2 (Ec – 0.78 eV) are produced by RTP. It is considered that the production of the trap EL2 is closely related to the Ga outdiffusion into the SiO2 film and the As indiffusion from the pile-up of elemental As near the interface. Effects of SiO2 film thickness on RTP-SiO2/GaAs are also reported.

Effects of rapid thermal processing (RTP) on SiO2/GaAs interfaces have been investigated with Auger electron spectroscopy and X-ray photoelectron spectroscopy. SiO2 films of 100, 175, 200 and 1250 nm thickness have been deposited on liquid encapsulated Czochralski-grown (100) n-type GaAs wafers by the RF sputtering method. RTP has been performed at 800°C for 6 s. For comparison, conventional furnace processing (CFP) has also been performed at 800°C for 20 min for 200-nm-thick SiO2/GaAs. The Ga is observed on the outer SiO2 surface for RTP samples as well as CFP samples. This indicates that the outdiffusion of Ga occurs after only 6 s at 800°C even through 1250-nm-thick SiO2 films. The depth profile of Ga reveals the pile-up of Ga on the outer SiO2 surface for both RTP and CFP samples. The amount of Ga on the outer surface gradually increases in the thickness range 1250 to 175 nm. The As is also observed on the outer surface. The amount of Ga and As on the outer surface rapidly increases at 100 nm thickness. Electron traps in RTP samples have been studied with deep-level transient spectroscopy. Different electron traps are produced in GaAs by RTP between 100-nm- and 200-nm-thick SiO2/GaAs. It is thought that the production of different traps by RTP is related to the amount of Ga and As loss through SiO2 films from GaAs.