Layered molybdenum disulfide (MoS2) has attracted great attention owing to its unique properties. However, synthesizing large area thin film with high crystal quality and uniformity remains a challenge. The present study explores large scale MoS2 growth methods, i.e., two-step method of sputtering-chemical vapor deposition and direct sputtering method, and applies them to fabricate field effect transistors and supercapacitors, respectively. The thickness modulated MoS2 films by two-step method exhibited high field effect mobility [∼12.24 cm2/(V s)] and current on/off ratio (∼106). The direct sputtering of MoS2 demonstrated excellent electrochemical performance with a high capacitance (∼30 mF/cm2) and cyclic stability upto 5000 cycles. Our growth methods reported here for the large scale MoS2 with high uniformity can trigger the development of several important technologies in two-dimensional materials.