In this paper, we describe the results of recent work in which TiSi2 formation on deep-submicron polysilicon gates is achieved using pulsed excimer laser irradiation. Formation of low resistivity titanium suicide on sub-0.1 μm polysilicon lines is confirmed by sheet resistance measurements. High-resolution TEM examination shows exceptionally smooth interface between suicide and heavily-doped silicon substrate. Gate to source/drain bridging is not observed. Analytical techniques including Rutherford backscattering spectroscopy (RBS) and X-ray diffraction (XRD) have been used to characterize the irradiated films. This laser-assisted suicide formation process is a promising technology for extreme submicron MOSFET applications.