Laser crystallization of silicon thin films on inexpensive glass substrates with a photo-absorption layer of diamond like-carbon (DLC) film was investigated. Scanned near-infrared beam emitted from a continuous wave (CW) laser diode at speed of 30 cm/s with power density of 30 kW/cm2 and wavelength of 940nm was effectively absorbed by DLC films, and changed to thermal energy for heating underlying silicon films with thickness of 50 nm. As a result, crystallization of silicon films was achieved. Raman scattering spectra was measure for the structural analysis of silicon films, and the sharp TO phonon peak at wave number of 520 cm-1 was observed. It shows that silicon films were effectively crystallized using the near-infrared laser diode. On the other hand, no crystallization was observed when the laser diode was directly irradiated to 50-nm-Si/quartz, because silicon has no optical absorption coefficient at 940 nm.