Ion beam-based techniques offer various possibilities for robust spatial control of nanoparticles. Since ion implantation is inherently good at depth control of solutes or nanoparticles, additional lateral control may lead to 3D control of nanoparticles. We pursue a lateral-control method of nanoparticle assembly by controlling photon-energy field under ion implantation. Laser is irradiated into a-SiO2, either sequentially or simultaneously with ion implantation. Ions of 60 keV Cu- or 3 MeV Cu2+ and photons of 532 nm are used to study effects on nanoparticle evolution. Simultaneous laser irradiation under ion implantation enhances surface plasmon resonance (SPR), i.e., nanoparticle precipitation, while sequential laser irradiation of 532 nm tends to cause a decay of SPR, i.e., dissolution of Cu nanoparticles. The energy-field perturbation of laser, interactive with nanoparticle evolution, can be used for controlling nanoparticle assembly.