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The authors present and discuss a method for simultaneous quantitative analysis of total loss on ignition (LOI) (CO2 + H2O) and CO2 content separate from the LOI, in an industrial environment of quicklime production. Total LOI is determined by the Compton scattered RhKα tube radiation which is used directly in the calibration equation. The resulting calibration curve for LOI, including matrix correction shows an accuracy of 0.15 mass%. The carbon content (CO2) is distinguished from total LOI by measuring CKα radiation, which is possible with the required accuracy by employing a new multilayer analyzer with greatly improved background characteristics. The method aims at high reliability and sample throughput and at becoming a less time-consuming alternative to the conventional method of LOI determination by weighing sequences before and after “ignition” at 1050 °C.
A novel technique to reduce planar defects in 3C-SiC is to grow it on “undulant-Si” substrates, on which the surface forms countered slopes oriented in the  and  directions. In the initial stage of 3C-SiC growth, step flow epitaxy occurs on each slope of the substrate, reducing the anti-phase boundaries. Then, the stacking faults in the (111) and (111) planes are gradually annihilated by combining with counter-stacking faults, while those parallel to (111) and (111) vanish. The freestanding 3C-SiC exhibits anisotropy in its electrical properties. The origin of the anisotropy in electrical properties is discussed by referring to the results of X-ray diffraction study.
Spinel ferrite oxides doping non-magnetic ions show the photo-induced magnetization (PIM) effect at high temperature [1-3]. Such a magnetization enhancement by light irradiation is a unique property in this material. In order effectively to use the PIM effect and precisely to control the magnetism, direct light-emission from light-emitting element substrates would be a useful technique. In this study, spinel ferrite Al0.2Ru0.8Fe2O4 (ARFO) thin films, with the high temperature PIM effect, were prepared on GaAs(001) substrates by a pulsed laser deposition technique to aim integration with light-emitting devices based on GaAs lattice-matched materials in the future. Results showed that (001)-oriented ARFO thin films were successfully grown by using MgO buffer layers. The magnetic properties were approximately the same as ARFO films using other substrates such as Al2O3(0001) or MgO(001).
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