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The growth of high-quality crystalline ZnO thin films on ZnO bulk substrates and of amorphous In-Ga-O and Ga-Al-O thin films has been demonstrated by using the solution-based cost-effective and environmental friendly ultrasonic spray assisted mist-CVD method. The homoepitaxial ZnO thin films with atomically flat surfaces were successfully grown on Zn-polar ZnO substrates via a step-flow growth mode, in spite of different miscut angles of the substrate, at the furnace temperature of 1000°C. The compositions and optical absorption edges of the amorphous In-Ga-O and Ga-Al-O thin films were controlled by means of the concentration ratios of [In]/([In]+[Ga]) and [Al]/([Al]+[Ga]) in the starting solutions.
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