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The characteristics of Si+ implanted into SI GaAs and its annealing behavior have been studied by x-ray double-crystal diffraction method. Results show that there is much information on strain contained in the rocking curves. When implanting at low doses, most of the implanted Si+ is in interstitial positions in the GaAs, and this produces tensile strain. After annealing, most of the implanted Si+ can be activated and the strain can be relieved. But when implanting at large doses, the strain can not be completely relieved even after annealing at high temperature
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