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Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
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- Journal:
- MRS Advances / Volume 1 / Issue 49 / 2016
- Published online by Cambridge University Press:
- 23 May 2016, pp. 3329-3340
- Print publication:
- 2016
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- Article
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