An investigation of metal-insulator-silicon capacitors, utilizing single crystal (La0.27Y0.73)2O3 as the insulator is presented. Crystalline insulators are of interest because of the possibilities of obtaining an atomically flat interface and entirely eliminating the presence of dangling bonds at the interface.
Capacitance – voltage measurements performed on MIS capacitors demonstrate a dielectric constant of 11.4 and suggest the absence of any interfacial silicon oxide layer. The equivalent oxide thickness of the sample with the thinnest dielectric layer is 15 Å. The density of interface states for the best samples is found to be in the mid 1012 cm−2eV−1 range and did not vary significantly after typical annealing treatments.