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The Atlantic Sea Scallop fishery has grown tremendously over the past twenty years. The location and magnitude of harvestable biomass fluctuates dramatically due to both natural variation and the explicitly spatial management system designed to allow small individuals to grow larger and more valuable. These fluctuations in natural advantages can have profound effects on fishing ports. We use methods from economic growth literature to show that ports with lower initial scallop landings have grown the fastest. Furthermore, good access to biomass influences long-run changes in landings, although this effect exhibits considerable variability across ports. We also find evidence of returns to scope, suggesting that ports with other fishing activities could be well positioned to attract new scalloping activity when stock conditions are favorable. Further investigation of the largest ports using time-series methods also shows a high degree of variability; there are long-run relationships between scallop fishing and harvestable scallop stock in some ports, short-run relationships in some ports, and no relationship between the two in others. We interpret this as evidence that heterogeneity in the natural productivity of the ocean combined with explicitly spatial fisheries management has induced a spatial component to the port-level response to changes in biomass availability.
Population-based colorectal cancer (CRC) screening programs that use a fecal immunochemical test (FIT) are often faced with a noncompliance issue and its subsequent waiting time (WT) for those FIT positives complying with confirmatory diagnosis. We aimed to identify factors associated with both of the correlated problems in the same model.
A total of 294,469 subjects, either with positive FIT test results or having a family history, collected from 2004 to 2013 were enrolled for analysis. We applied a hurdle Poisson regression model to accommodate the hurdle of compliance and also its related WT for undergoing colonoscopy while assessing factors responsible for the mixture of the two outcomes.
The effect on compliance and WT varied with contextual factors, such as geographic areas, type of screening units, and level of urbanization. The hurdle score, representing the risk score in association with noncompliance, and the WT score, reflecting the rate of taking colonoscopy, were used to classify subjects into each of three groups representing the degree of compliance and the level of health awareness.
Our model was not only successfully applied to evaluating factors associated with the compliance and the WT distribution, but also developed into a useful assessment model for stratifying the risk and predicting whether and when screenees comply with the procedure of receiving confirmatory diagnosis given contextual factors and individual characteristics.
Little is known about the combined use of benzodiazepines and antidepressants in older psychiatric patients. This study examined the prescription pattern of concurrent benzodiazepines in older adults treated with antidepressants in Asia, and explored its demographic and clinical correlates.
The data of 955 older adults with any type of psychiatric disorders were extracted from the database of the Research on Asian Psychotropic Prescription Patterns for Antidepressants (REAP-AD) project. Demographic and clinical characteristics were recorded using a standardized protocol and data collection procedure. Both univariate and multiple logistic regression analyses were performed.
The proportion of benzodiazepine and antidepressant combination in this cohort was 44.3%. Multiple logistic regression analysis revealed that higher doses of antidepressants, younger age (<65 years), inpatients, public hospital, major comorbid medical conditions, antidepressant types, and country/territory were significantly associated with more frequent co-prescription of benzodiazepines and antidepressants.
Nearly, half of the older adults treated with antidepressants in Asia are prescribed concurrent benzodiazepines. Given the potentially adverse effects of benzodiazepines, the rationale of benzodiazepines and antidepressants co-prescription needs to be revisited.
To secure the reliability of flexible electronics, the effect of multicomponent stress on the device properties during complex mechanical deformation needs to be thoroughly understood. The electrical resistances of metal interconnects are investigated by in situ monitoring at different twisting angles and with different pattern positions. As the twisting angle increased, the electrical resistance increased earlier. Furthermore, in the line pattern located far from the central axis, severe electrical degradation and fatigue damage formation were observed. Multicomponent stress evolution during twisting was analyzed by the finite-element simulation method. For easy practical application for estimating the representative twisting strain, an analytic solution of twisting deformation was formulated and compared with the simulation. Using the equivalent strain, the fatigue lifetime was fitted, and the exponents were obtained for lifetime expectation. This systematic study provides the guidelines for highly reliable flexible devices and the tools for determining the expected fatigue lifetime.
To date, there have been a number of research proposals to explore the newly emerging wireless charging technologies based on radio-frequency (RF) signals, ambient or dedicated. In particular, research efforts towards achieving the goal of transmitting information and energy at the same time have been rapidly expanding, but the feasibility of this goal has not been fully addressed. Moreover, the respective coverage areas of transmitting information and energy are wildly different, the latter being considerably smaller than the former. This is because the receiver sensitivities are very different, namely -60 dBm for an information receiver and -10 dBm for an energy receiver [1, 2].
Owing to this limitation, recently a commercial implementation of RF energy transfer has been restricted to lower-power sensor nodes with dedicated RF energy transmitters, such as the Powercast wireless rechargeable sensor system  and the Cota system .
In this chapter, we discuss the implementation of long- and short-range RF energy harvesting systems, where the former is to provide far-field-based RF energy transfer over long distances with a 4 × 4 phased antenna array and the latter to provide biosensors with RF energy over short distances. An overall circuit design for these RF energy harvesting systems is described in detail, along with the measurement results to validate the feasibility of far-field-based RF energy transfer. We illustrate the designed test-beds which will be applied to develop sophisticated energy beamforming algorithms to increase the transmission range. Finally, a new research framework is developed through the cross-layer design of the RF energy harvesting system, which is intended to power a low-power sensor node, like the Internet-of-Things (IoT) sensor node. To this end, we present a circuit-layer stored energy evolution model based on the measurements which will be used in designing the upper-layer energy management algorithm for efficient control of the stored energy at the sensor node. The new framework will be useful because the existing works on RF energy harvesting do not explicitly take into account a realistic temporal evolution model of the stored energy in the energy storage device, like such as a supercapacitor.
Decreased hemoglobin levels increase the risk of developing dementia among the elderly. However, the underlying mechanisms that link decreased hemoglobin levels to incident dementia still remain unclear, possibly due to the fact that few studies have reported on the relationship between low hemoglobin levels and neuroimaging markers. We, therefore, investigated the relationships between decreased hemoglobin levels, cerebral small-vessel disease (CSVD), and cortical atrophy in cognitively healthy women and men.
Cognitively normal women (n = 1,022) and men (n = 1,018) who underwent medical check-ups and magnetic resonance imaging (MRI) were enrolled at a health promotion center. We measured hemoglobin levels, white matter hyperintensities (WMH) scales, lacunes, and microbleeds. Cortical thickness was automatically measured using surface based methods. Multivariate regression analyses were performed after controlling for possible confounders.
Decreased hemoglobin levels were not associated with the presence of WMH, lacunes, or microbleeds in women and men. Among women, decreased hemoglobin levels were associated with decreased cortical thickness in the frontal (Estimates, 95% confidence interval, −0.007, (−0.013, −0.001)), temporal (−0.010, (−0.018, −0.002)), parietal (−0.009, (−0.015, −0.003)), and occipital regions (−0.011, (−0.019, −0.003)). Among men, however, no associations were observed between hemoglobin levels and cortical thickness.
Our findings suggested that decreased hemoglobin levels affected cortical atrophy, but not increased CSVD, among women, although the association is modest. Given the paucity of modifiable risk factors for age-related cognitive decline, our results have important public health implications.
Worldwide, the number of individuals with dementia is growing in an epidemic manner, with an estimated 35.6 million people affected in 2010 (Prince et al., 2013). With the population aging in Asia, dementia care will become a major public health challenge in this region in the coming decades. Over half of the patients with dementia in the world will live in Asia by 2030. In China alone, a recent review of dementia studies showed that there were 9.2 million dementia patients in 2010 (Chan et al., 2013). These figures are staggering. In many Asian countries, dementia is regarded as a shameful illness, and the local terms for dementia are derogatory. Dementia carries a stigma that may lead to patients’ reluctance in seeking treatment and delay in diagnosis. In addition, local names for dementia frequently conjure up pictures of severe stage of dementia, and may lead to therapeutic nihilism, discouraging mental health professionals from working with elderly patients with dementia. As Asia faces the challenges of a rapidly aging population and provisions of care for growing number of dementia patients, change in local names for dementia has become an issue of attention.
To investigate whether low vitamin D status was related to insulin resistance (IR) or impaired fasting glucose (IFG) in Korean adolescents, after adjusting for total body fat mass (FM).
A cross-sectional study.
Korea National Health and Nutrition Examination Survey (KNAHNES) 2009–2010.
In total, 1466 participants (769 males) aged 10–19 years were assessed for serum 25-hydroxyvitamin D (25(OH)D) levels, for FM by whole-body dual-energy X-ray absorptiometry and for IR by homeostasis model assessment (HOMA-IR) after an 8 h fast.
Age-, sex-, season- and physical-activity-adjusted regression models showed that serum 25(OH)D levels were significantly related to markers of adiposity (P = 0·016 for FM (g), P = 0·023 for FM (%) and P = 0·035 for fat mass index). When the participants were stratified into three 25(OH)D categories (<37·5 nmol/l (n 553), 37·5 to < 50 nmol/l (n 543) and ≥ 50 nmol/l (n 370)), significantly decreasing trends were observed for fasting insulin (all P < 0·001), HOMA-IR (all P < 0·001) and the odds ratios for IFG (all P for trend < 0·05) from the lowest to the highest 25(OH)D category, after adjustments for age, sex, physical activity and all markers of adiposity. In the multivariate logistic regression analysis, the likelihood of participants in the lowest serum 25(OH)D category having IFG was 2·96–3·15 compared with those in the highest 25(OH)D category (all P < 0·05).
There was a significant inverse relationship between vitamin D status and IR and the risk of IFG, independent of adiposity, in Korean adolescents.
The formation and morphological evolution of germanides formed in a ternary Ni/Ta-interlayer/Ge system were examined by ex situ and in situ annealing experiments. The Ni germanide film formed in the Ni/Ta-interlayer/Ge system maintained continuity up to 550°C, whereas agglomeration of the Ni germanide occurred in the Ni/Ge system without Ta-interlayer. Through microstructural and chemical analysis of the Ni/Ta-interlayer/Ge system during and after in situ annealing in a transmission electron microscope, it was confirmed that the Ta atoms remained uniformly on the top of the newly formed Ni germanide layer during the diffusion reaction. Consequently, the agglomeration of the Ni germanide film was retarded and the thermal stability was improved by the Ta incorporation.
TiO2 is one of the most promising photoanodes for solar-hydrogen conversion by water splitting. Recently, hydrothermally synthetic rutile TiO2 nanorods (NRs) show outstanding photoelectrochemical (PEC) performance in water splitting because of its large surface area, fast carrier transport, and short diffusion length. However, light absorption and carrier transport conflict. Few have investigated the dependence of PEC performance on NR length. This study examines how different TiO2 NR lengths grown on an FTO substrate affects their PEC performance when splitting water. The results show that the optimal absorption length of rutile TiO2 NRs is 3.75 μm. However, under simulated solar illumination (AM1.5 G), the maximum PEC efficiency of these TiO2 NRs is 0.33% at a length of 500 nm. This suggests that carrier transport is the most important variable for improving PEC efficiency.
We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs). Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+−Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0.13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 104 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep. The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.
We have fabricated the new top gate depletion mode n-type alternating magnetic field enhanced rapid thermal annealing (AMFERTA) polycrystalline silicon (poly-Si) thin film transistors (TFTs), which show the excellent electrical characteristics and superior stability compared with hydrogenated amorphous silicon (a-Si:H) TFTs and excimer laser crystallized (ELC) low temperature polycrystalline silicon (LTPS) TFTs. The fabricated AMFERTA poly-Si TFTs were not degraded under hot-carrier stress, and highly biased vertical field stress. The considerably large threshold voltage shift (ΔVTH) and trap state density reducing were occurred when the gate bias and drain bias were both large enough. The dominant mechanism of instability in the fabricated depletion mode AMFERTA poly-Si TFTs may be due to carrier induced donor-like defects reduction within the channel layer, especially near the drain junction.
We have investigated temperature dependence on the hysteresis phenomenon of SLS poly-Si TFT on a glass substrate, extremely at low temperature (213K). The p-type sequential lataral solidification (SLS) polycrystalline Silicon (poly-Si) TFT was fabricated on glass substrate. As the temperature was reduced, it was observed that hysteresis phenomenon was increased, whereas the hysteresis was suppressed at high temperature. This could be explained by a difference of initially electron and hole trapped charges into gate insulator is much larger in low temperature than in high temperature. And we have verified that drain current was changed with a different previous gate starting voltage even at same bias condition by experimental results due to the hysteresis phenomenon of SLS poly-Si TFT. Hysteresis of SLS poly-Si TFT should be improved for a pixel element of high quality AMOLED display.
Cellulose electro-active paper (EAPap) has attracted much attention as a new smart electronic material to be utilized as mechanical sensors, bio compatible applications and wireless communications. The thin EAPap film has many advantages such as lightweight, flexible, dryness, biodegradable, easy to chemically modify, cheap and abundance. Also EAPap film has a good reversibility for mechanical performance, such as bending movement, under electric field. The main actuation mechanism governed by piezoelectric property can be modulated by material direction and stretching ratio during process. In this paper we present the overview as well as fabrication process of cellulose EAPap as a novel smart material. Also we propose the method to enhance the piezoelectricity, its mechanical and electromechanical properties. In addition, the fabrication of high quality metal patterns with Schottky diode on the cellulose surface is an initiating stage for the integration of the EAPap actuator and electronic components. The integration of flexible actuator and electronic elements has huge potential application including flying magic carpets, microwave driven flying insets and micro-robots and smart wall papers.
We have investigated the shift of threshold voltage in the a-Si:H TFT due to the various negative pulse width stress. The drain bias dependent threshold voltage shift in the pulsed stress of a-Si:H TFT for AMOLED backplane is also measured and analyzed. When a positive gate and drain bias is applied to a-Si:H TFT (W/L = 200/4 Ým), VTH of a-Si:H TFT is increased during the stress time due to the defect state creation and charge trapping. VTH of a-Si:H TFT is increased from 1.645V to 2.53V (δVTH=0.885V) after the DC gate bias stress of VGS=15V, VDS=0V for 20,000sec. When the pulsed negative bias stress is applied to the gate electrode of the current driving a-Si:H TFT with the drain bias, VTH shift is considerably reduced due to the hole trapping into the gate insulator during the stress. When a negative pulse width is 16msec (pulse of 60Hz), the VTH is increased form 1.594V to 2.195V (δVTH=0.601V). When a negative pulse width increases from 16msec to 5sec without drain bias (VDS=0V), VTH is increased from 1.615V to 2.055V (δVTH=0.44V). When a drain bias is increased from 0V to 15V, VTH is slightly decreased from 1.58V to 1.529V (δVTH=-0.051V) due to large (-30V) VGD (VG=-15V, VD=15V) bias, while it is increased from 1.66V to 2.078V (δVTH=0.418V) width DC gate bias stress of VGS=15V, VDS=15V for 20,000sec.
We have fabricated a new magnetic field enhanced solid phase crystallization (FESPC) polycrystalline silicon (poly-Si) thin film transistors (TFTs), which shows the excellent electrical characteristics and superior stability compared with hydrogenated amorphous silicon (a-Si:H) TFTs. The mobility (μ) and threshold voltage (VTH) of p-type TFTs of which the channel width and length are 5 μm and 7 μm, respectively are 31.98 cm2/Vs and -6.14 V, at VDS=-0.1 V. In the FESPC TFTs, the characteristics caused by grain boundary are remarkable due to large number of grain boundaries in the channel compared with poly-Si TFTs. The VTH of the TFT which have 5 μm channel length is smaller than that of 18 μm channel length by 1.36 V, which is considerably large value. It is due to the large number of grain boundaries in the channel and the high lateral electric field. The grain boundary potential barrier height is decreased, when the large lateral electric field is applied (which is called DIGBL effect). As a result of increased mobility, the drain current is increased, and VTH can be decreased. The activation energy (Ea) is strongly depended on the drain bias and the number of grain boundaries. is decreased, caused by the large drain bias and/or smaller number of grain boundaries. This decreased Ea can be reduced VTH due to increased the drain current. VTH of p-type poly-Si TFT employing FESPC on the glass substrate is affected by channel length and VDS due to energy barrier lowering effect at the grain boundary by increased lateral electrical field.
Vitamin D is essential for Ca absorption, prevention of falls and fracture, and maintenance of muscle strength and balance. Lack of awareness of the importance of vitamin D in bone health is common in Asia.
To define key statements, objectives and actions for improving osteoporosis management and vitamin D inadequacy in Asia.
Results and conclusion
This declaration was jointly produced by specialists at the Asia Metaforum on the Role of Vitamin D and the Management of Osteoporosis, held in September 2006 in Hong Kong, to define actions to prevent vitamin D insufficiency in Asia. Although developed specifically for Asia, some or all of these statements may be applicable to other regions of the world.
Analytical electron microscopy (AEM) was used to examine the initial interfacial reaction layers between a eutectic Sn–3.5Ag solder and an electroless nickel-immersion gold-plated (ENIG) Cu substrate during reflow at 255 °C for 1 s. AEM confirmed that a thick upper (Au,Ni)Sn2 layer and a thin Ni3Sn4 layer had formed through the reaction between the solder and ENIG. The amorphous electroless Ni(P) plated layer transformed into two P-rich Ni layers. One is a crystallized P-rich Ni layer, and the other is an intermediate state P-rich Ni layer before the crystallization. The crystallized P-rich layer consisted of Ni2P and Ni12P5. A thin Ni2P layer had formed underneath the Ni3Sn4 layer and is believed to be a predecessor of the Ni2SnP ternary phase. A Ni12P5 phase was observed beneath the Ni2P thin layer. In addition, nanocrystalline Ni was found to coexist with the amorphous Ni(P) phase in the intermediate state P-rich Ni layer.
Based on a structure model of mixture of phases, the crystal structure analysis of (Ba1−xLax)[Mg(1+x)/3Nb(2−x)/3]O3 (BLMN) (x = 0.9 and 1.0) by Rietveld refinements was carried out. The pure La(Mg2/3Nb1/3)O3 (LMN) and BLMN (x=0.9) actually consist of a two-phase mixture rather a single phase. One is Fm-3m, which is cubic and 1:1 ordered and the other is P21/n, which is monoclinic and has both 1:1 ordering and the antiphase and inphase tilting of oxygen octahedra with a−a−c+. The weight fraction of the Fm-3m phase is 17.5% at x=0.9 and further decreases to 7.5% in pure LMN. Meanwhile, that of the P21/n phase is 82.5% at x =0.9 and further increases to 92.5% in pure LMN. The I4/m phase, which is present as a minor phase from x=0.3 to 0.7, disappeared when x≥0.9. The abrupt change of the x-ray diffraction pattern at x=0.9 is caused by a change of major phase from Fm-3m to P21/n phase in the matrix.