The experiments reported in this research paper aimed to determine the effect of supplementing different forms of L-methionine (L-Met) and acetate on protein synthesis in immortalized bovine mammary epithelial cell line (MAC-T cells). Treatments were Control, L-Met, conjugated L-Met and acetate (CMA), and non-conjugated L-Met and Acetate (NMA). Protein synthesis mechanism was determined by omics method. NMA group had the highest protein content in the media and CSN2 mRNA expression levels (P < 0.05). The number of upregulated and downregulated proteins observed were 39 and 77 in L-Met group, 62 and 80 in CMA group and 50 and 81 in NMA group from 448 proteins, respectively (P < 0.05). L-Met, NMA and CMA treatments stimulated pathways related to protein and energy metabolism (P < 0.05). Metabolomic analysis also revealed that L-Met, CMA and NMA treatments resulted in increases of several metabolites (P < 0.05). In conclusion, NMA treatment increased protein concentration and expression level of CSN2 mRNA in MAC-T cells compared to control as well as L-Met and CMA treatments through increased expression of milk protein synthesis-related genes and production of the proteins and metabolites involved in energy and protein synthesis pathways.

The synthesis, structure, and electrical performances of titanium dioxide (TiO2 and also doped TiO2) thin films, a capacitor dielectric for dynamic random access memory (DRAM) and a resistance switching material in resistance switching RAM (ReRAM), are reviewed. The three-dimensionality of these structures and the extremely small feature sizes (<20 nm) of these memory devices require the synthesis method of TiO2-based layers to exhibit high degree of conformality. Atomic layer deposition is, therefore, the method of choice in respect of film growth for these applications. The unique arrangement of the TiO6-octahedra in the rutile structure, which results in the value for dielectric constant of the dielectric layer, εr (>100), makes the material especially attractive as the capacitor dielectric layer in DRAM. Removing some of the oxygen ions from the rutile structure and arranging the resulting oxygen vacancies on a specific crystallographic plane results in the so called Magnéli phase materials, which show distinctive conducting semiconductor or metallic characteristics. External electrical stimuli can cause the repeated formation and rupture of conducting channels that consist of these Magnéli phase materials in the insulating TiO2 matrix, and this aspect makes the material a very feasible choice for applications in ReRAM. This article reviews the material properties, fabrication process, integration issues, and prospect of TiO2 films for these applications.

NiCr films were thermally evaporated on the Mn-Ni-Co-O thick-film substrates. The NiCr/Mn-Ni-Co-O bi-layer systems were tested in a thermal shock chamber with three temperature differences of 150, 175 and 200°C. The systems were considered to have failed when the sheet resistance of NiCr films changed by 30% relative to an initial value. As the cyclic repetition of thermal shock increased, the sheet resistance of NiCr coatings increased. The Coffin-Manson equation was applied to the failure mechanism of cracking of NiCr coatings and the SEM observation of cracks and delamination in NiCr coatings due to thermal cycling agreed well with the failure mechanism.

We have proposed the new poly-Si TFT which reduces the leakage current effectively by employing highly resistive a-Si region in the channel. The active layer of proposed device is crystallized selectively by employing excimer laser annealing while the both sides of channel near the source/drain are not recrystallized and remained as a-Si. Unlikely LDD or offset structure, the a-Si region which is designed to reduce the leakage current acts as the conduction channel of carriers under the ON state, so that the ON current is decreased very little. The selectively crystallized active layer can be fabricated by irradiating the excimer laser through ITO film of which transmittance at the wave length of laser is selectively adjusted. In the course of fabricating the proposed device, any additional photo masking step is not necessary and misalign problem is eliminated. The experimental results show that the ON/OFF current ratio of proposed poly-Si TFT is 106 while that of conventional one is 105.