We report on the integration of flowable oxide based Fresnel microlenses with AlGaN based 280 nm light emitting diodes (LED). The lenses were fabricated on the back side of the LED sapphire substrates using direct electron beam writing. Ten concentric rings with different width and variable thickness were designed for 360 degree phase correction. Within each ring the thickness was varied in five steps to approximate a linear profile. The width of each thickness step varied from 100 nm to several microns. Outer diameter of the lens was 65μm. A focal distance of 68 μm was measured for the fabricated microlenses. At the focal plane a FWHM of intensity profile as small as 14 μm was measured for lenses integrated with 30 μm diameter UV LEDs . The maximum intensity at focal plane exceeded the background radiation by a factor of 50. Comparison of the LED performance before and after the lens fabrication did not reveal any degradation of integral efficiency of devices. These results demonstrate the feasibility of using flowable oxide Fresnel microlenses in optical systems based on micro-pixel deep UV AlGaN LEDs.

In this paper, using chemical etching, atomic force microscope (AFM) and High- resolution X-ray diffraction (HRXRD), we report a study of the effect of various small miscuts of (0001) sapphire substrate (<1°) and the way to further improve the material quality. A set of AlN epilayers and AlN/AlxGa1-xN Superlattices (SLs) were grown by Migration-enhanced Metalorganic Chemical Vapor Deposition (MEMOCVD) on vicinal (0001) sapphire substrates. The threading dislocation density was found to be very sensitive to the miscut angles. The etch pit density reduced to 7×106 cm-2 for normal-oriented (0°-off) from the starting value of 7×107 cm-2 for 0.5°-off. We found the surface morphologies can be easily controlled by the different substrate miscut angles. The 1-2 Monolayers (MLs) step flow morphology for normal- oriented substrate changed to step bunches of 10 MLs height for 0.5°-off substrate. Correspondingly, AFM Root Mean Square (RMS) increased from 1.52 to 9.15 Å with a 5um×5um scan. This finding may help enhance the quality of full structure UVLED material and eventually improve the lifetime of UVLEDs.