Ever since the discovery of the astonishing properties of GaN, many research groups have been involved in the processing of the perfect GaN crystal. Iodine Vapor Phase Growth (IVPG) technique was employed to grow GaN epilayer on a MOCVD pre-deposited buffer layer. This new epitaxial system was characterized by TEM, AFM and EFM. A complete AFM study involved the polarity measurements and the etch pit density measurements. For the first time a systematic study was performed of the dislocation density changing as a function of distance from the substrate. TEM performed on the cross-section, as well as the plan view, of the samples showed a remarkable decrease in the dislocations in the current system, compared to the samples that were solely deposited by MOCVD. Advanced analytical methods of polarity and dislocation density measurements have been established to understand the relation between microstructure and electrical properties of the thick film GaN. Electrostatic Force Microscopy has been suggested as a potential tool for obtaining polarity information.