Recently, we reported on the facile synthesis of a number of two-dimensional early transition metal carbides and nitrides, derived from the MAX phases, that we labeled MXenes. Herein, we report on the electronic and elastic properties—investigated by first principles calculations utilizing the generalized gradient approximation within the density functional theory—of the following two-dimensional transition metal carbides: Ti2C, Ti3C2, Ti4C3, V2C, Cr2C, Zr2C, Hf2C, and Ta2C, Ta3C2, and Ta4C3. Similar to the MAX phases, the MXenes are found to be metallic and possess high elastic moduli when stretched along the basal planes.

Silicon Carbide has a unique combination of properties that include a nearly diamond-like hardness, intrinsic electrical semiconductivity and a high thermal conductivity. This combination of properties has led to it's use in a number of applications including substrates for Light Emitting Diodes (LEDs), power, RF (radio frequency) and other electronic devices in addition to mirror substrates and optical devices as well as stop layers in integrated circuit chip manufacture. In addition, the chemical inertness and high hardness of SiC has historically resulted in low removal rates during chemical mechanical Planarization (CMP). Recent efforts in our labs have led to being able to polish single crystal silicon carbide at removal rates up to 400 nm/hr yielding a root mean squared roughness on the order of a nanometer as determined by AFM and interferometry. The high rates and smoothness obtained are expected to translate to other types of silicon carbide. Fundamental studies by FTIR, streaming potential and ESCA have been done to elucidate the mechanism of silicon carbide polishing.