The preparation of nano-crystalline silicon suitable for optoelectronic purposes by plasma-enhanced hydrogenation is reported. The method is compatible with mature ULSI technology because of its low temperature and non-wet processing environment. Visible light emission with peak wavelengths ranging from blue to red has been observed and could be tuned by varying the processing conditions. While the blue light emission may be due to surface defects present in the oxide layer, the green and red light emissions are believed to be due excitonic emission within the nano-crystalline grains as a result of quantum confinement effects. The layers were studied by SEM, TEM, CL and FTIR. A LED was fabricated and electroluminescence demonstrated.