9 results
Excess Carrier Lifetime Measurements for GaN on Sapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity Decay Method
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E3.3
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- 2004
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Deep level study in epitaxial 4H-SiC grown on substrates inclined toward <1 100>
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- Journal:
- MRS Online Proceedings Library Archive / Volume 719 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, F8.11
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- 2002
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Improvement of Pin Photodiodes on the Soi Layer by Rapid Thermal Annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 378 / 1995
- Published online by Cambridge University Press:
- 26 February 2011, 731
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- 1995
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Evaluation of the Bonded Silicon-on-Insulator Wafer with Lifetime Measurement Using a Non-Contact Laser-Microwave Method
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- Journal:
- MRS Online Proceedings Library Archive / Volume 347 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 179
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- 1994
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Contactless Characterization of the Surface Property of the Si+-Implanted GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 347 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 283
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- 1994
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Contactless Evaluation Of The Stress In X-Ray Mask Wafers (SiN/Si) Using A Laser/Microwave Method.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 306 / 1993
- Published online by Cambridge University Press:
- 15 February 2011, 91
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- 1993
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Contactless Characterization of The Surface Condition of Sulfur-Treated Semi-Insulating GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 315 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 169
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- 1993
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Characterization of GaAs-InAs Heterostructures by Micro-Raman Spectroscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 221 / 1991
- Published online by Cambridge University Press:
- 25 February 2011, 465
- Print publication:
- 1991
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Migrations of Interstitial Atoms in Semiconductors (Surface Diffusion and Kick-Out Mechanism)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 549
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- 1989
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