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A GaAs/InAs heterostructure was characterized by micro-Raman spectroscopy. A 2 μm thick GaAs layer was grown on an (100) InAs substrate by molecular beam epitaxy. The sample was then angle-lapped so that the interface region is exposed on the bevel. At the close vicinity of the interface, GaAs longitudinal-optic (LO) frequency was lower by about 3 cm−1 than at the asgrown surface. The LO shift decreased with increasing distance from the interface. The spectral width did not strongly depend on the position, and thus the shift would be mainly due to strain. A similar experiment was carried out for an InAs/GaAs structure, and a broad peak which was tentatively assigned to the plasmon-LO coupled mode was observed for the InAs layer.
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