We developed a new GaN on SiC growth method by metalorganic vapour phase epitaxy (MOVPE) using of a single 2-dimension-growth step. Prior to epitaxy, to inhibit pre-reaction of Si-face SiC substrate with TMGa and NH3, TMAl was flowed without NH3. 1.5 μm of undoped crack-free GaN was grown on 6H-SiC (Si-face). Without buffer layer, the vertical resistance of GaN/SiC structure was found to be around 82.1Ω as determined by I-V characteristic. Further reduction in vertical resistance is expected by growth of n-GaN (1.5μm)/SiC structure (300μm). We also expect a SiC-based GaN heterostructure vertical FET will achieve high power and high switching speed performance.