In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown from Ga-based melt in the temperature range of 800-1000°C at less than 2 atm ambient pressure. Growth was performed at ∼2 mm/hr growth rate. X-ray diffraction revealed polycrystalline structure of the ingots. Homoepitaxial GaN layers were deposited by HVPE technique on the substrates, which were fabricated from the grown GaN ingots.