14 results
Evaluation of electron overflow in nitride-based LEDs influenced by polarization charges at electron blocking layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1736 / 2014
- Published online by Cambridge University Press:
- 11 February 2015, mrsf14-1736-t04-04
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- 2014
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Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs
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- MRS Online Proceedings Library Archive / Volume 1736 / 2014
- Published online by Cambridge University Press:
- 07 May 2015, mrsf14-1736-t13-08
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- 2014
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Oxygen related shallow acceptor in GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E5.10
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- 2004
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Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 7 / 2002
- Published online by Cambridge University Press:
- 13 June 2014, e7
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- 2002
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Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I7.8.1
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- 2001
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High Efficiency Uv Emitter Using High Quality GaN/AlxGa1−xN Multi-Quantum Well Active Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G12.3
- Print publication:
- 2000
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Defect and Stress Control of Algan and Fabrication of High-Efficiency Uv-Led
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G12.7
- Print publication:
- 2000
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The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 398-404
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- 2000
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High-Quality AlxGa1−xN Using Low Temperature-Interlayer and its Application to UV Detector
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 42-48
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- 2000
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Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 870-877
- Print publication:
- 1999
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High-Quality AlxGa1−xN Using Low Temperature-Interlayer and its Application to UV Detector
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W1.10
- Print publication:
- 1999
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The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W5.8
- Print publication:
- 1999
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Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, G10.1
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- 1998
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Structural Properties of Nitrides Grown by Omvpe on Sapphire Substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 479
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- 1997
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