High quality Al0.3Ga0.7As/GaAs quantum wells with centrally doped Be-acceptors were grown by molecular beam epitaxy (MBE). The well width is either 10 nm or 20 nm, and the concentration of Be-acceptors is varied between 5× 1016/cm3 and 2×1018/cm3. The structures were treated systematically by dc H-plasma at different sample temperatures, gas pressures and cooling down procedures. The passivation of Be-acceptors were characterized by photoluminescence spectroscopy and secondary ion mass spectrometry (SIMS). Without causing degradation of the A1GaAs/GaAs interfaces, we have obtained, for the first time, a deactivation of above 80% of the Be-acceptors. The influence of the Be-doping on the bandgap excitons in the QW structures is also investigated in detail. A significant difference is found in comparison with the earlier reports for 150 Å wide quantum wells, in which different samples were used for different doping concentrations.