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The Mn deposited clean Si (111) substrates were examined with UHV-TEM and STM that are part of an UHV-TEM/STM integrated characterization system. The Mn deposition with coverages of 5-20 ML followed by annealing at 673 K formed MnSi islands with Moire fringes. They showed metallic character. Subsequent annealing at 873 K dissipated the islands instead of transforming them into MnSi1.7. The re-deposition of Mn and re-annealing at 473 K succeeded to transform MnSi islands into MnSi1.7. The islands had several orientation relationships with substrate Si, and were semiconducting. The growth mechanism of MnSi1.7 is inferred.
Low energy characteristic X-ray emission from Al2O3 monocrystalline specimens is measured under bombardment of 100 keV Xe+ ions. The electric field influence on emission of the X-rays of constitute elements in the specimens was investigated. The energy dispersive X-ray spectroscopy spectra show that the characteristic X-ray of Al-Kα seems to be depressed by the applied dc voltages, while the peak intensity of O-Kα was not notably influenced. The O-Kα peaks were broadened and the total counts increased as a higher dc bias was applied. It is possible that a dc electric field parallel to the target surface may influence the X-ray emission from it under ion bombardment.