Giant-axonal neuropathy (GAN), a chronic peripheral neuropathy with associated Central Nervous System dysfunction and tight curly hair, is described in a 17-year-old girl. Biopsies of this girl’s muscle and nerve are characteristic of this condition. Her clinical course over a 12 year period characterizes a disease of a slowly progressive nature.

Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007

The present research investigated whether children's referential choices for verb arguments are motivated by pragmatic features of discourse referents across different developmental stages, not only for children learning null argument languages but also for those learning overt argument languages. In Study 1, the form (null, pronominal, or lexical) and referential status (given or new) of verb arguments were systematically analysed in six English-speaking and six Japanese-speaking children and their mothers when the children were at 1;9 and 3;0. In Study 2, non-linguistic pragmatic correlates (pointing, reaching, moving, making a head motion, or purposeful gaze direction toward a referent) were analysed in addition to the form and referential status of arguments at each of four linguistic periods between MLU 1·00 and 4·00 in two English-speaking and two Japanese-speaking children and their mothers. The results revealed that, when both linguistic and non-linguistic referential behaviours were considered, the English-speaking children showed patterns consistent with language-universal as well as language-specific discourse-pragmatic principles by 2;0 (between MLU 2·00 and 2·99), whereas the Japanese-speaking children did not show these patterns even as late as 3;0 (MLU 4·00 and above). Results also indicated that the children who were exposed to more consistent discourse-pragmatic referential patterns from their input tended to show these patterns earlier than those exposed to inconsistent patterns. Together these findings suggest that both the referential status of discourse referents as well as parental input predict children's referential choices across typologically different languages.

We report on a high-resolution x-ray photoelectron spectroscopy (HRXPS) study using synchrotron radiation, for the identification of the core level binding energies of Ga 3d and N 1s, from a stoichiometric Ga-polar GaN(0001)-1×1 sample.

Three surface shifted components were found on the stoichiometric surface for the Ga 3d feature. The first surface shifted component has a higher binding energy of 0.85 eV, and is interpreted as surface Ga with one of the N bonds replaced by an empty dangling bond. This structure is belonging to the stoichiometric clean and ordered Ga-polar GaN(0001)-1×1 surface. The second, with a binding energy relative the bulk of −0.76 eV, is interpreted as Ga with one of the bonds to a Ga atom, which indicates a slight excess of Ga on the surface. The third surface shifted component is shifted by 2.01 eV and is related to gallium oxide in different configurations.

The N 1s feature is complex with five surface shifted components relative the bulk were found. Two components with binding energy shifts of −0.54 eV and 0.47 eV are interpreted as surface shifted core levels from the stoichiometric, clean Ga-polar GaN(0001)-1×1 surface.

We also analysed the Ga 3d spectrum after deposition of 1.5 ML of Ga on a stoichiometric surface. The surface shift for the Ga 3d5/2 component from the Ga overlayer is −1.74 eV relative the bulk GaN.

The C 1s and O 1s core levels from remaining surface contamination have also been line shaped analysed and show complex structures.

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

We report on the investigation of GaN(0001)−1×1 using synchrotron radiation x-ray excited photoelectron spectra from the core levels Ga 3p and N 1s, as well as from the contaminants O 1s and C 1s. Measurements were done after outgassing (a) and during three surface treatment methods performed in sequence; (b) ammonia (NH3) flux anneals, (c) Ga deposition with sample held at room temperature followed by vacuum anneal, and (d) Ga deposition on a heated sample followed by Ga desorption during NH3 flux anneal. We have found that the initial NH3 flux anneals increased the amount of present N on the surface and enabled the formation of a well-ordered surface structure, according to the low energy electron diffraction (LEED) pattern. After treatment (b) and (d) the core level spectra of Ga 3p are much improved showing clearly distinct features indicative of increased Ga-N bonding. The Ga to N concentration ratio decreases during the surface treatments from 4.0 to 1.1, hence towards stoichiometry. The amounts of C (and O) present on the surface after outgassing corresponded to 1.1 (0.9) monolayers (ML) but reduced to 0.1 (0.1) ML after the final treatment (d). The Fermi level position in the band gap shifts down by 0.55 eV during the surface treatments, indicating a change of states present in the band gap. We have also found strong support that this Ga-polar sample is initially Ga-terminated.

Preparation of Ir thin films for PZT capacitors by MOCVD using a new liquid Ir precursor, Ir(EtCp)(CHD) was investigated. Ir thin films with a highly reflecting surface and (111)-orientation were successfully obtained at 230–400 C. When Ir(EtCp)(CHD) was used, shorter incubation time (20min at 230°C and not observed above 240°C) and higher nucleation density (300–400mm-2 at 250–300°C) were observed because of its lower decomposition temperature (300°C) than that of previously reported liquid precursor, Ir(EtCp)(COD). Resistivity of 100nm-thick Ir films grown at 250–350°C were less than 20μΩ·cm. PZT capacitors with top and bottom electrodes prepared using Ir(EtCp)(CHD) showed D-E hysteresis loop with Pr of 15μC/cm and Ec of 60kV/cm. No degradation of switching up to 10 switching cycles by bipolar pulses of ±231kV/cm (±3V) and 500kHz.

Background. Many studies have suggested a possible aetiological role for obstetric complications in the development of schizophrenia. We focused on prenatal physical growth in schizophrenia, a contentious issue in the literature.

Methods. We compared gestational age at birth, birth weight (BW) and birth head circumference (BHC) between 312 schizophrenics and 517 controls, and between 187 schizophrenics and their matched healthy siblings. Information on obstetric histories was obtained from the Maternal and Child Health Handbooks (i.e. contemporaneous records).

Results. Gestational age at birth was significantly earlier in the schizophrenics than in the controls (P = 0·017). Pre-term birth (gestational age of 36 weeks or less) was more common in schizophrenics than in controls (8·0% v. 3·4%, P = 0·005, odds ratio 2·5). Low BW (2500 g or less) was more frequent in schizophrenics than in controls (9·6% v. 4·6%, P = 0·005, odds ratio 2·2). The schizophrenics had significantly lighter BW (P = 0·0003) and tended to have smaller BHC (P = 0·081) compared with controls. However, multiple regression analysis showed that there was no significant difference in BW or BHC between the schizophrenics and controls when gestational age and maternal weight were controlled. There was no significant difference in BW or BHC between schizophrenics and their siblings, although the schizophrenics tended to be born at earlier gestational age than their siblings.

Conclusions. Our results suggest that prematurity at birth is associated with a risk of developing schizophrenia in adulthood. When gestational age and maternal body weight were allowed for, there was no evidence that schizophrenics tend to have lower mean BW or smaller BHC.

Hydrogen gas evolution from water dispersing nanoparticles under 60Co γ-ray irradiation was investigated under various conditions. Dispersion of TiO2, A12O3, ZnO, ZrO2 and CeO2 nanoparticles with average sizes of 6 nm - 11 µm showed hydrogen yields much higher than that obtained by pure water radiolysis, and the yields seemed to depend on their particle size and shape rather than their chemical species. Hydrogen yield increased with increasing γ-dose but not linearly, which implies the occurrence of a kind of reversing reaction. Some of the nanoparticles supported with Pt, Au and Pd were also examined. The yields were strongly affected by these noble metals, which indicates an important role of the particle surface in the total mechanism of the present hydrogen evolution.

Samples of Ti and Zr metals have been carbonized or nitrided at high temperature by means of reactive plasma processing. Thickness and hardness of modified layers increased with the processing temperature and time in an experimental range below 1500°C for less 5h. The maximum hardness of TiC-layer modified at 1300°C for 3h was about 5000Hv(kg/mm2) and the maximum thickness of ZrC-layer formed at 1400°C for 5h reached about 100μm. A TiC-layer was analyzed with EPMA, XRD, EXAFS and PAS(Positron Annihilation Spectroscopy). It was confirmed that the sub-surface layer of Ti metal was the mixture of TiC ceramics and Ti metal, and that the thickness of TiC with NaCI type structure was very large.

Leakage currents through MIS (Metal Insulator Semiconductor) structures with several ultra-thin (14–30Å) insulators (silicon dioxide, silicon oxynitride, and silicon nitride) have been investigated. The leakage currents through both dioxide and oxynitride films sandwiched between n-type poly-Si gates and n-type substrates can be well fitted by the equation for the electron direct tunneling mechanism using the same effective mass and barrier height. This result indicates that incorporation of a minute amount of nitrogen atoms does not seriously affect the basic electrical properties of the oxide films. Leakage currents through ultra-thin nitride can te also fitted with the equation for the direct tunneling mechanism without assuming any extra conduction mechanisms such as hopping through defects.

Effects of SiH2Cl2 and H2 addition to SiH4 on photochemical vapor deposition (photo-CVD) of amorphous Si (a-Si) and epitaxial Si films were investigated, and roles of Cl and H in the growth mechanism were discussed. The surface morphology and the defect density of the obtained a-Si films were evaluated by atomic force microscope (AFM), and constant photocurrent method (CPM), respectively. It was found that the H2 dilution of SiH4 is effective to prepare the a-Si films with smooth surfaces and low defect density. Furthermore, nearly flat surface with the root mean square (RMS) of the roughness of 0.35nm was obtained by the SiH2Cl2 addition to H2-diluted SiH4. In the Si epitaxy, the SiH2Cl2 addition is also efficient to improve the film quality. It is suggested that the growing surface is terminated by both Cl and H, and the surface is more stable than that terminated by only H. Therefore, the diffusion on the growing surface of the film precursors such as SiH3 is enhanced, resulting in the improvement of the surface morphology and the film quality.

Hydrogenated Amorphous silicon films (a-Si:H) were prepared by mercury sensitized photo-CVD using SiH4 and SiH2Cl2 gas mixture. The effects of chlorine (Cl) on the electrical, optical and structural properties of the a-Si:H films were investigated. It was found that a small addition of SiH2Cl2 to the deposition system increases the photo-sensitivity, decreases the defect density, and reduces the light induced degradation of a-Si:H films. At a large addition of SiH2Cl2, however, the CI incorporation into the films was observed, resulting in the deterioration of the film properties. The electrical and optical properties were successfully improved by the H2 dilution when the films were deposited with a large addition of SiH2Cl2.