Amorphous CNx films were obtained on monocrystalline silicon substrates by direct writing laser induced chemical vapor deposition from CCI4 and NH3 using CuBr vapor laser. The main process parameters (scanning speed, laser power, background temperature) were varied in wide ranges. The deposition rates in the laser spot were in the range of 1 – 10 μm/s. Scanning electron microscopy showed that the layers had rather rough surface. The deposited films were composed of carbon, nitrogen, silicon and oxygen, as detected by AES and EDX analyses. Chemical bonding structure was investigated by FTIR and showed absorption bands corresponding to different chemical groups - CH, CH2, CH3, C=C, C=N, C=O, Si-O, Si-C, Si-N and C-N. The electrical measurements of the deposited films showed that their resistivity varied from 0.15 to 1.40 MΩ.cm and it was very sensitive to the deposition conditions.