In this paper, we present a process which has the benefits of operating at lower temperatures than conventional CVD, that uses low cost precursors, and produces only environmentally benign byproducts. This new method for depositing Ti, TiN, TiO2, and Ti.Siy thin films has been demonstrated using a coflow diffusion reactor to react Na metal vapor with TiCl4 as described by the following equation: 4Na(g) + TiCl4(g) ---Ar ---> Ti(s) + 4NaCl(g). In this reaction, sodium strips chlorine from titanium tetrachloride freeing titanium metal to grow into a thin film on a substrate placed in the reaction zone. TiN and TiO2 films were produced by the introduction of N2 gas or O2 gas into the reactor, respectively. Using this reaction chemistry, we have produced Ti and TiN thin films on Cu substrates at 610 °C (considerably lower than the 900 °C to 1200 °C required for conventional thermal CVD of titanium) and TiO2 and titanium silicides (TixSiy) films on silicon substrates. Thermodynamics calculations indicated that this class of chemistry is generic and that a wide range of metals and ceramics could be grown; and preliminary experiments do suggest that TiC and SiC thin films can be grown using this process. The thin films were primarily analyzed by scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), and Raman pectroscopy.