In this paper we discuss the growth and characterization of 3C-SiC epitaxial layers grown on both a Si substrate as well as on a novel substrate. The growth uses a typical three step process. First an etch of the Si surface is performed, second the surface of the Si is carbonized and third 3C-SiC is grown on the carbonized surface. Several characterization techniques were used to verify the quality of the 3C-SiC film. Microscopy was used to investigate the surface morphology, X-ray and electron diffraction were used to determine crystal structure, cross section TEM was used to verify crystal structure and highlight twinning, and x-ray topography was used to measure the strain fields induced in Si substrate at the 3C-SiC/Si interface.