We study the properties of CuInSe2 thin films grown on glass and on Mo substrates. The investigation is carried out with X-ray diffraction, RBS, XTEM and SEM.
CuInSe2/Mo contact stability is investigated after annealing at 600°C. RBS reveals that this treatment induces an interdiffusion between the metal and the chalcopyrite. To clarify this reaction, we have investigated the individual thin-film couples upon annealing. RBS and X-ray diffraction reveal insignificant interaction between Mo/Cu and Mo/In, but Se reacts with Mo.