We have studied the effects of pulsed laser irradiation on silicon
implanted, thermally activated , Calcia Stabilized Zirconia (CSZ) capped
GaAs substrates. Reference substrates have also been irradiated in air for
comparison. CSZ as a solid electrolyte has been used to chemically reduce
the GaAs surface native oxides prior to irradiation while maintaining the
surface stoechiometry. Our results indicate a spectacular decrease in defect
density after laser irradiation of the CSZ capped-native oxide free samples,
as compared to the samples irradiated in air.