Hydrogen incorporation in n-type Si-doped GaAs epilayers is now a well-known process. This paper is devoted to the study of the stability of SiH (SiD) complexes when submitted to an electron beam in n-type Si-doped GaAs epilayer and also in 2D-AlGaAs heterostructures exposed to a hydrogen or deuterium plasma.
The results obtained by Hall effect measurements on hydrogenated and deuterated GaAs epilayers with different thicknesses (0.2 and 0.35νm) and Si planar-doped AlGaAs/GaAs/InGaAs heterostructures exposed to an electron beam with different injection energies (10 to 50 keV) are presented. On one hand, the reactivation of Si dopants strongly decreases when deuterium is used. On the other hand, the study of this reactivation versus injection energies of electrons suggests an energetic electron excitation effect rather than a minority carrier generation effect. In addition, for the 0.2νm thick GaAs epilayer and the 2D heterostructures, the free carrier density does not vary significantly for low electron densities, and as a consequence, the reactivation of the Si dopants occurs above an electron dose threshold. This phenomenon might be attributed to the filling of surface states as the dopants are progressively reactivated.
As a result, due to the electron dose threshold as well as their high electron mobility properties, Si planar-doped AlGaAs/GaAs/InGaAs heterostructures are particularly interesting to reactivate dopants, with a good spatial contrast, using an electron beam irradiation and the effects described in this paper could open the fabrication of high mobility 1D or 2D mesoscopic structures for electronic or optoelectronic applications.